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MM1221 IM1007 701CPA MRF90 NJU6572 12864 BCM5695 2S110
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  Datasheet File OCR Text:
 DB3,DB4,DB6
SILICON BIDIRECTIONAL DIACS FEATURES
Three way layer two terminal, axial lead ,
POWER DISSIPATION DO - 35
150 mW
hermetically sealed diacs are designed specifically for triggering thyrisitors .The demonstrate low breakover current. The breakover symmetry is within three volts(DB3,DB4) or four volts(DB6).These diacs are intended for use in thyrisitors phase control.,circuits for lamp dimming universal motor speed control and heat control
This diocle is also avaiable in the DO-35case.
.020 TYP. (0.51) 1.083(27.5) MIN
.150(3.8) MAX .079 MAX (2.0)
1.083(27.5) MIN
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS
PARAMETERS Power Dissipation on Printed Cir cuit(L=10mm) Repetitive Peak on-state Current TA=50 Tp=10uS f=100HZ TSTG/TJ -44 to+125/-40 to+110 ITRM 2.0 A SYMBOL DB3 Pc VALUE DB4 150 DB6 mW UNITS
Storage and Operating Juntion Temperature
ELECTRICAL CHARACTERISTICS
PAPRAMETERS SYMBOLS TEST CONDITIONS DB3 Breakover Voltage* VBO C=22nf** See Diagram 1 C=22nf** See Diagram 1 I=(IBO to IF=10mA) See FIG 1 See FIG 2 C=22nf** See FIG 3 IB=0.5 VBO MAX See FIG 3 Min Min Max Typ Max 5 5 100 1.5 10 V V uA uS uA Min Typ Max Breakover Voltage Symmetry 1+VBOI1-VBOI Dynamic Breakover Voltage Output Voltage* Breakover Current* Rise Time* Leakage Current* 1V1 VO IBO tr IB Max 28 32 36 VALUE DB4 35 40 45 3 DB6 56 60 70 V V UNITS
NOTE:* Electrical characteristics applicable in both forward and reverse directions. ** Connected in parallel with the devices.
~ 211 ~
RATING AND CHARACTERISTIC CURVES DB3,DB4,DB6
FIG.1-CURRENT-VOLTAGE CHARACTERISTICS +IF 10mA 220V 60HZ
FIG.2-TEST CIRCUIT FOR OUTPUT VOLATGE
10K
500K
D.U.T VO R=20
IB IB -V 0.5VBO V VBO +V
0.1uF
-IF FIG.3-TEST CIRCUIT SEE FIG.2 ADJUST R FOR Ip=0.5A P(mW) 90% IP 160 140 120 100 10% tr 80 60 40 20 0 0 10 20 30 40 50 60 70 80 FIG.5-RELATIVE VARIATION OF VBO VERSUS JUNCTION TEMPERATURE(TYPICAL VALUES) VBO(IJ) VBO(TJ=25 1.08 ITRM(A) 2 1 f = 100Hz Tjinitial=25C TJ = (C) 90 100 110 120 130 Tamb(C) FIG.4-TEST CIRCUIT FOR OUTPUT VOLATGE
FIG.6-PEAK PULSE CURRENT VERSUS PULSE DURATION (MAXIMUM VALUES)
1.06
1.04
0.1
tp(us)
1.02
1.00 25 50 75 100 125
0.01 10 100 1000 10000
~ 212 ~


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